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| CLI710 IRED - Phototransistor Reflective Object Sensor 0.500(12.7) min. 0.175 (4.46) 0.165 (4.21) 1. Cathode Vcc 2. Anode 0.100 Dia 3 0.187 (4.75) 0.179 (4.55) 2 1 0.021 (0.53) Dia 0.017 (0.43) 4 Places 3 0.030 (0.76) max. 0.160 (4.08) Emitting Window 0.150 (3.81) Diameter 0.230 (5.84) 0.209 (5.31) 2 2 1 (R) Clairex Technologies, Inc. March, 2002 Internally 3. Emitter Output 4. Collector Ground 4 connected to header 0.048 (1.22) 0.028 (0.71) 0.046 (1.17) 0.036 (0.91) 45 4 3 0.020 (0.50) Diameter Detection Area 1 4 3 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) absolute maximum ratings (TA = 25C unless otherwise stated) storage temperature ........................................................................ -40C to +125C operating temperature ..................................................................... -40C to +100C lead soldering temperature(1) ........................................................................... 260C IRED continuous forward DC current(2) ......................................................................35mA description reverse DC voltage................................................................................................5V The CLI710 consists of an 880nm continuous power dissipation(3)......................................................................100mW AlGaAs IRED and a phototransistor mounted on a custom TO-72 header. PHOTOTRANSISTOR collector-emitter voltage ......................................................................................30V The IRED emits a broad radiation emitter-collector voltage ........................................................................................5V pattern through the formed clear continuous power dissipation(4)......................................................................100mW epoxy lens. Radiation reflected note: from the target is received by a 1. 0.06" (1.5mm) from the header for 5 seconds maximum 0.020" diameter fiber optic light pipe 2. Derate linearly 0.37mA/C from 25C free air temperature to TA = +100C. attached to the active area of the 3. Derate linearly 1.07mW/C from 25C free air temperature to TA = +100C. phototransistor. For assistance or 4. Derate linearly 1.07mW/C from 25C free air temperature to TA = +100C. other configurations, call Clairex. features * 0.020" dia. light pipe aperture * T0-72 package * analog output electrical characteristics (TA = 25C and VCC = 5.0V unless otherwise noted) symbol parameter Input IRED VF IR V(BR)CEO V(BR)ECO ID Forward voltage Reverse current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Dark current min 30 5.0 - typ 1.50 - max 1.65 10 20 units V A V V nA test conditions IF = 20mA VR = 5V IC = 1mA, IF = 0, Ee = 0 IE = 100A, IF = 0, Ee = 0 VCE = 10V, IF = 0, Ee = 0 VCE = 5V, IF = 20mA, d = 0.030" VCE = 5V, IF = 20mA Output Phototransistor Coupled Light current(4) 150 250 A Crosstalk ratio(5) 3 10 ICX (ratio) notes: 4. Measured using a Kodak 90% diffuse reflectance neutral white test card. 5. No reflective surface. ICX(ratio) = IL(A)/ICX(A). IL Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 3/16/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
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